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1N4447

From FoxLabs Wiki

Diode
Component type	Active

The 1N4447 is a standard silicon switching signal diode.

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Template:Signal diodes

See also

Electronic components

Semiconductor
devices

MOS transistors	Transistor NMOS PMOS BiCMOS BioFET Chemical field-effect transistor (ChemFET) Complementary MOS (CMOS) Depletion-load NMOS Fin field-effect transistor (FinFET) Floating-gate MOSFET (FGMOS) Insulated-gate bipolar transistor (IGBT) ISFET LDMOS MOS field-effect transistor (MOSFET) Multi-gate field-effect transistor (MuGFET) Power MOSFET Thin-film transistor (TFT) VMOS UMOS
Other transistors	Bipolar junction transistor (BJT) Darlington transistor Diffused junction transistor Field-effect transistor (FET) Junction Gate FET (JFET) Organic FET (OFET) Light-emitting transistor (LET) Organic LET (OLET) Pentode transistor Point-contact transistor Programmable unijunction transistor (PUT) Static induction transistor (SIT) Tetrode transistor Unijunction transistor (UJT)
Diodes	Avalanche diode Constant-current diode (CLD, CRD) Gunn diode Laser diode (LD) Light-emitting diode (LED) Organic light-emitting diode (OLED) Photodiode PIN diode Schottky diode Step recovery diode Zener diode
Other devices	Printed electronics Printed circuit board DIAC Heterostructure barrier varactor Integrated circuit (IC) Hybrid integrated circuit Light emitting capacitor (LEC) Memistor Memristor Memtransistor Memory cell Metal-oxide varistor (MOV) Mixed-signal integrated circuit MOS integrated circuit (MOS IC) Organic semiconductor Photodetector Quantum circuit RF CMOS Silicon controlled rectifier (SCR) Solaristor Static induction thyristor (SITh) Three-dimensional integrated circuit (3D IC) Thyristor Trancitor TRIAC Varicap

Voltage regulators

Vacuum tubes (RF)

Cathode ray tubes

Gas-filled tubes

Adjustable

Passive

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